Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor-Reference-Cited by-同舟云学术

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Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor

Published:1993-03 Issue:1-2 Volume:129 Page:281-288
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hageman P.R.,de Croon M.H.J.M.,Tang X.,Giling L.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Zinc Doping of MOCVD GaAs

2. Characterization of p-GaAs by low pressure MOCVD using DEZ as dopant

3. Zinc-doped GaAs epilayers grown by atmospheric-pressure MOCVD using diethylzinc

4. Zinc and tellurium doping in GaAs and AlxGa1−xAs grown by MOCVD

5. A study of zinc doping in metallo‐organic chemical vapor deposition of InP

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015

2. Effect of the carrier gas and the group-V precursor on the DEZn doping efficiency for InP and In0.54Ga0.46As in LP-MOVPE;Journal of Crystal Growth;2001-11

3. Influence of Zn introduction on AlxGa1−xAs crystal growth by MOVPE;Journal of Crystal Growth;2000-12

4. Low temperature photoluminescence properties of Zn-doped GaAs;Materials Science and Engineering: B;1998-12

5. Heavily doped p-type AlGaInP grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;1998-07

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