Optimizing AlxGa1−xN separate confinement heterostructure lasers with large band discontinuities
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364380
Reference22 articles.
1. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
2. Shortest wavelength semiconductor laser diode
3. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes
4. Optical gain in wide bandgap GaN quantum well lasers
5. Numerical simulation of wide band‐gap AlGaN/InGaN light‐emitting diodes for output power characteristics and emission spectra
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interband transition matrix element and temperature dependence of the lasing threshold for GaN laser structures;Journal of Applied Spectroscopy;2007-11
2. Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy;Journal of Applied Physics;2001
3. The Effect of Al in Plasma-assisted MBE-grown GaN;MRS Internet Journal of Nitride Semiconductor Research;2000
4. Analysis of composition fluctuations in AlxGa1−xN;Materials Science and Engineering: B;1999-05
5. The Effect of Al in Plasma-Assisted MBE-Grown GaN;MRS Proceedings;1999
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