Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb-Reference-Cited by-同舟云学术

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Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

Published:2016-01-14 Issue:2 Volume:119 Page:025701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Madon B.¹^ORCID,Wegrowe J.-E.¹,Drouhin H.-J.¹,Liu X.²,Furdyna J.²,Khodaparast G. A.³

Affiliation:

1. Laboratoire des Solides Irradiés, CNRS UMR 7642, CEA-DSM-IRAMIS, Ecole polytechnique, Université Paris-Saclay, 91128 Palaiseau, France

2. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

3. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, USA

Funder

French National Research Agency

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4939236

Reference22 articles.

1. Current focusing in InSb heterostructures

2. Observation of spin dependent photocoductivity in InSb quantum well nanowires

3. Electrical properties of InSb quantum wells remotely doped with Si

4. Spectroscopy of Rashba spin splitting in InSb quantum wells

5. Photoinduced spin-polarized current in InSb-based structures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A giant Nernst power factor and figure-of-merit in polycrystalline NbSb₂ for Ettingshausen refrigeration;Energy & Environmental Science;2023

2. Colossal Nernst power factor in topological semimetal NbSb2;Nature Communications;2022-12-09

3. High mobility of (111)-oriented large-domain (>100 μm) poly-InSb on glass by rapid-thermal crystallization of sputter-deposited films;Journal of Applied Physics;2022-10-14

4. Enhancement of figure of merit for Nernst effect in Bi77Sb23 alloy by Te-doping;Applied Physics Letters;2020-09-08

5. Interband and intraband relaxation dynamics in InSb based quantum wells;Journal of Applied Physics;2016-12-21

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