Interband and intraband relaxation dynamics in InSb based quantum wells-Reference-Cited by-同舟云学术

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Interband and intraband relaxation dynamics in InSb based quantum wells

Published:2016-12-21 Issue:23 Volume:120 Page:235702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bhowmick M.¹^ORCID,Khodaparast G. A.¹,Mishima T. D.²,Santos M. B.²,Saha D.³,Sanders G.³^ORCID,Stanton C. J.³

Affiliation:

1. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, USA

2. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019, USA

3. Department of Physics, University of Florida, Gainesville, Florida 32611, USA

Funder

National Science Foundation (NSF)

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4971347

Reference49 articles.

1. Spectroscopy of Rashba spin splitting in InSb quantum wells

2. Spin effects in InSb quantum wells

3. Relaxation of quasi-two-dimensional electrons in a quantizing magnetic field probed by time-resolved cyclotron resonance

4. Time resolved measurements of spin and carrier dynamics in InAs films

5. Dynamics of photoexcited carriers and spins in InAsP ternary alloys

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Topological Quantum Transport Characteristic by Three‐band Correlation Mechanism in 2D SnSe;Advanced Quantum Technologies;2024-06-04

2. Band structure, g -factor, and spin relaxation in n -type InAsP alloys;Physical Review B;2023-09-14

3. Photoluminescence from two-color quantum dot films;Optical Components and Materials XIX;2022-03-04

4. Self-assembled InAs/InGaAsP/InP quantum dots: Intraband relaxation impacted by ultrathin GaP sublayer;Journal of Applied Physics;2020-03-31

5. SiGe/AsSb bilayer heterostructures: structural characteristics and tunable electronic properties;Nanotechnology;2019-10-17

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