Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125819
Reference19 articles.
1. SiO2 as an insulator for SiC devices
2. Advances in SiC MOS Technology
3. Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface
4. Improved oxidation procedures for reduced SiO2/SiC defects
5. Effects of chemical composition on the electrical properties of NO‐nitrided SiO2
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