Modulation of oxygen transport by incorporating Sb2Te3 layer in HfO2-based memristor-Reference-Cited by-同舟云学术

Modulation of oxygen transport by incorporating Sb2Te3 layer in HfO2-based memristor

Published:2021-11-08 Issue:19 Volume:119 Page:193503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Yun-Lai¹²,Li Li-Heng²,Qiao Chong²^ORCID,Zeng Yun-Tao²,Yuan Jun-Hui²^ORCID,Cheng Xiao-Min¹²³^ORCID,Miao Xiang-Shui¹²³^ORCID

Affiliation:

1. Hubei Yangtze Memory Laboratories, Wuhan 430205, China

2. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

3. Yangtze Advanced Memory Industrial Innovation Center, Wuhan 430014, China

Funder

National Key Research and Development Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0065922

Reference45 articles.

1. Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

2. Memory materials and devices: From concept to application

3. Reliability of analog resistive switching memory for neuromorphic computing

4. The future of electronics based on memristive systems

5. Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

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