Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM-Reference-Cited by-同舟云学术

Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

Published:2015 Issue:43 Volume:7 Page:18030-18035
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Buckwell Mark¹²³,Montesi Luca¹²³,Hudziak Stephen¹²³,Mehonic Adnan¹²³,Kenyon Anthony J.¹²³

Affiliation:

1. Department of Electronic and Electrical Engineering

2. University College London

3. London WC1E 7JE, UK

Abstract

Conductive atomic force microscopy was used to etch through SiO_xresistance switching devices to produce three-dimensional renderings of conductive filaments.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04982B

Reference28 articles.

1. Emerging memories: resistive switching mechanisms and current status

2. Nanoionics-based resistive switching memories

3. Resistive switching in silicon suboxide films

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

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