Current threshold uniformity of shallow proton stripe GaAlAs double heterostructure lasers grown by metalorganic‐chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93007
Reference6 articles.
1. Ohmic contacts ton‐GaAs using low‐temperature anneal
2. (Al,Ga) As Double-Heterostructure Lasers: Comparison of Devices Fabricated with Deep and Shallow Proton Bombardment
3. The high‐temperature (55–70 °C) device characteristics of cw (AlGa)As double‐heterostructure proton‐bombarded stripe lasers grown by molecular beam epitaxy
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1. Raman scattering of slab‐mode phonons in InGaAsP/InP multiple quantum wells;Applied Physics Letters;1991-11-04
2. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991
3. High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique;IEEE Journal of Quantum Electronics;1990-05
4. Metalorganic Chemical Vapor Deposition of Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Raman scattering studies of metalorganic chemical vapor deposition grown GaAs/AlAs superlattices;Journal of Applied Physics;1987-08
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