Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2713142
Reference14 articles.
1. MBE growth and properties of epitaxial metal oxides for high- dielectrics
2. First-principles study ofZrO2∕Siinterfaces: Energetics and band offsets
3. Structural and Electronic Properties of the Interface between the High-kOxideLaAlO3and Si(001)
4. First-principles calculations of the electrical properties ofLaAlO3and its interface with Si
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