Mechanical stress effects on Pb(Zr,Ti)O3 thin-film ferroelectric capacitors embedded in a standard complementary metal-oxide-semiconductor process-Reference-Cited by-同舟云学术

Mechanical stress effects on Pb(Zr,Ti)O3 thin-film ferroelectric capacitors embedded in a standard complementary metal-oxide-semiconductor process

Published:2014-06-02 Issue:22 Volume:104 Page:222908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Acosta Antonio G.¹,Rodriguez John A.¹,Nishida Toshikazu²

Affiliation:

1. Analog Technology Development, Texas Instruments, Dallas, Texas 75243, USA

2. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4881596

Reference40 articles.

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2. Stoichiometry and phase purity of Pb(Zr,Ti)O3 thin films deposited by metal organic chemical vapor deposition

3. S. Summerfelt, T. Moise, K. Udayakumar, K. Boku, K. Remack, J. Rodriguez, J. Gertas, H. McAdams, S. Madan, J. Eliason, and others, in Sixth IEEE International Symposium Application Ferroelectrics (IEEE, 2007), pp. 9–10.

4. Size effects in nanostructured ferroelectrics

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