Dopant and carrier profiling in modulation‐doped GaAs multilayers with cross‐sectional scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110073
Reference9 articles.
1. On the determination of dopant/carrier distributions
2. Tunneling spectroscopy of the GaAs(110) surface
3. Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs‐AlGaAs interfaces
4. Phosphorus vacancies and adatoms on GaP(110) surfaces studied by scanning tunneling microscopy
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3. Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy;Defect and Diffusion Forum;2004-11
4. Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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