Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123859
Reference14 articles.
1. Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs
2. Long wavelength infrared (λ≂11 μm) quantum cascade lasers
3. High performance interminiband quantum cascade lasers with graded superlattices
4. Near-room-temperature mid-infrared interband cascade laser
5. 4-11 mu m infrared emission and 300 K light emitting diodes from arsenic-rich InAs1-xSbxstrained layer superlattices
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