Author:
Ting David Z.,Rafol Sir B.,Khoshakhlagh Arezou,Soibel Alexander,Keo Sam A.,Fisher Anita M.,Pepper Brian J.,Hill Cory J.,Gunapala Sarath D.
Abstract
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
32 articles.
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