Formation of GdSi2under UHV evaporation andinsituannealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96523
Reference6 articles.
1. The formation of silicides from thin films of some rare‐earth metals
2. Diffusion marker experiments with rare‐earth silicides and germanides: Relative mobilities of the two atom species
3. Ion‐beam‐induced modification of silicide formation in rare‐earth metals: Er‐Si and Tb‐Si systems
4. Growth rates for Pt2Si and PtSi formation under UHV and controlled impurity atmospheres
5. Low Schottky barrier of rare‐earth silicide onn‐Si
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1. Integrating AlN with GdN Thin Films in an in Situ CVD Process: Influence on the Oxidation and Crystallinity of GdN;ACS Applied Materials & Interfaces;2017-08-07
2. Epitaxial Growth and Electrical Properties of Thick SmSi2Layers on (001) Silicon;Japanese Journal of Applied Physics;2010-02-22
3. Ab-initio calculations of the optical and magnetic properties of erbium silicide ErSi2;Journal of Physics and Chemistry of Solids;2009-10
4. Field emission from gadolinium silicide prepared by ion implantation with electron beam annealing;Journal of Applied Physics;2007-03-15
5. Epitaxial gadolinium nitride thin films;Applied Physics Letters;2007-02-05
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