Silicon quantum well as passivation barrier on GaAs surface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118801
Reference13 articles.
1. In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity
2. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
3. Unpinned GaAs MOS capacitors and transistors
4. GaAs MIS structures with SiO2 using a thin silicon interlayer
5. Accumulation capacitance for GaAs‐SiO2interfaces with Si interlayers
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1. Double-Barrier Quantum-Well Structure: An Innovative Universal Approach for Passivation Contact for Heterojunction Solar Cells;ACS Applied Energy Materials;2023-01-27
2. Surface passivation in c-Si solar cells via a double-barrier quantum-well structure for ameliorated performance;Applied Surface Science;2023-01
3. Innovative passivating contact using quantum well at poly-Si/c-Si interface for crystalline silicon solar cells;Chemical Engineering Journal;2021-11
4. Antireflection and surface passivation behaviour of SiO2/Si/SiO2 quantum wells on silicon;Solar Energy Materials and Solar Cells;2002-10
5. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
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