Nitrogen doping in AlGaP grown by metalorganic vapor phase epitaxy using ammonia
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109950
Reference15 articles.
1. High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition -- Impurity Doping and 590 nm (Orange) Electroluminescence --
2. Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer
3. High‐brightness InGaAlP green light‐emitting diodes
4. Characterization of AlGaP/GaP heterostructures grown by MOVPE
5. Optical properties and indirect-to-direct transition of GaP/AlP (001) superlattices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of AlGaNP on GaP(100) substrates;Applied Physics Letters;2006-02-13
2. Nitrogen surfactant effects in GaInP;Journal of Applied Physics;2004-12-15
3. Molecular-beam epitaxy of (Al)GaAsN using ammonia as the nitrogen source;Applied Physics Letters;2001-03-05
4. Nitrogen doping in AlGaP grown by organometallic vapor phase epitaxy using tertiarybutylamine as nitrogen source;Journal of Crystal Growth;1994-12
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