High‐resolution x‐ray diffractometry of ZnTe layers at elevated temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360276
Reference28 articles.
1. Transmission electron microscopy of (001) ZnTe on (001) GaAs grown by molecular‐beam epitaxy
2. Investigation of strained ZnTe epilayers by high resolution electron microscopy
3. Early stage of growth for (001) ZnTe and (111) CdTe on (001) GaAs: A structural study of the interface using conventional and grazing-incidence X-ray diffraction
4. Effects of thermal strain on the optical properties of heteroepitaxial ZnTe
5. Temperature dependence of the lattice constant in doped and nonstoichiometric GaAs, GaAs1−xPx, and GaP
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