Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3487955
Reference56 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Defects in epitaxial multilayers
3. Threading dislocation reduction in strained layers
4. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
5. Indium-induced changes in GaN(0001) surface morphology
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