Suppression of V-pits formation in InGaN layer by stepped growth with annealing interval
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Published:2022-02
Issue:
Volume:28
Page:101691
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ISSN:2468-0230
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Container-title:Surfaces and Interfaces
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language:en
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Short-container-title:Surfaces and Interfaces
Author:
Liang Feng,Zhao Degang,Liu Zongshun,Chen Ping,Yang Jing
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Chinese Academy of Sciences
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Beijing Nova Program
Subject
Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry