Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters-Reference-Cited by-同舟云学术

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Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters

Published:2010-10-15 Issue:8 Volume:108 Page:083112
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Song Yafeng,Lu Yanwu,Zhang Biao,Xu Xiaoqing,Wang Jun,Guo Yan,Shi Kai,Li Zhiwei,Liu Xianglin,Yang Shaoyan,Zhu Qinsheng,Wang Zhanguo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3487953

Reference29 articles.

1. Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method

2. Intersubband optical absorption in a step asymmetric semiconductor quantum well driven by a terahertz field

3. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

4. Peak position of the intersubband absorption spectrum of quantum wells with controlled electron concentrations

5. Insituscanning‐tunneling‐microscopy studies of current driven mass transport in Ag

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of thin AlAs layer insertion on intersubband optical transitions in GaAs/AlGaAs quantum- well structures;Physica E: Low-dimensional Systems and Nanostructures;2017-02

2. Nanogroove control of intersubband absorption in AlGaAs/GaAs step quantum wells;Semiconductor Science and Technology;2016-02-01

3. Numerical design of AlGaN/GaN double quantum wells for intersubband absorption in the wavelength range ofλ9.3–10.6 μm;Superlattices and Microstructures;2015-10

4. In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy;Journal of Applied Physics;2013-02-28

5. Intersubband absorption in strained AlxGa1−xN/GaN quantum wells with InyGa1−yN nanogroove layers;Superlattices and Microstructures;2012-04

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