Ion‐implanted In0.1Ga0.9As metal‐semiconductor field‐effect transistors on GaAs (100) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101834
Reference4 articles.
1. High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs
2. A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates
3. The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K
4. High-performance millimeter-wave ion-implanted GaAs MESFETs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion-implanted In/sub (x)/Ga/sub (1-x)/As MESFET's on GaAs substrate for low-cost millimeter-wave IC application;IEEE Transactions on Electron Devices;1992-03
2. Cryogenic microwave performance of 0.5- mu m InGaAs MESFET's;IEEE Electron Device Letters;1992-01
3. Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors withFt≳100 GHz;Applied Physics Letters;1991-06-10
4. 60-GHz noise performance of ion-implanted In/sub x/Ga/sub 1-x/As MESFET's;IEEE Electron Device Letters;1991-05
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