Implications of a model for instability during film growth for strained InGaAs and SiGe layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123126
Reference16 articles.
1. The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface
2. Growth of strained InGaAs layers on InP substrates
3. Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy
4. Growth morphology evolution and dislocation introduction in the heteroepitaxial system
5. Masked growth of InGaAsP‐based quantum wells for optoelectronic device applications
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4. Compositional modulation and surface stability in InGaP films: Understanding and controlling surface properties;Journal of Applied Physics;2007-03-15
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