High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111205
Reference12 articles.
1. Ultra-thin dielectrics for semiconductor applications— growth and characteristics
2. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing
3. Channel hot-carrier stressing of reoxidized nitrided silicon dioxide
4. Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
5. Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications
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