Characterization of High-k Gate Dielectric with Amorphous Nanostructure-Reference-Cited by-同舟云学术

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Characterization of High-k Gate Dielectric with Amorphous Nanostructure

Published:2013-10-16 Issue:12 Volume:42 Page:3529-3540
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Bahari Ali,Gholipur Reza

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-013-2772-z.pdf

Reference32 articles.

1. R.H. Dennard, IEEE J. Solid State Circuits 9, 256 (1974).

2. P. Packan, Science 285, 2079 (1999).

3. M. Schulz, Nature 399, 729 (1999).

4. A. Bahari, R. Gholipur, Z. Khorshidi Mianaee, and S.H. Mousavi, Am. J. Sci. Res. 51, 76 (2012).

5. A. Bahari, Z. Khorshidi Mianaee, R. Gholipur, T. Taghipoor Lemraski, and A. Rezaeian, Am. J. Sci. Res. 54, 19 (2012).

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