Annealing of CdS/CdTe solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333353
Reference7 articles.
1. Admittance spectroscopy of impurity levels in Schottky barriers
2. Deep level impurities and current collection in CdS/CdTe thin‐film solar cells
3. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states
4. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
5. Annealing of Bombardment Damage in a Diamond-Type Lattice: Theoretical
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Preparation of CdS thin films by electrodeposition: effect of colloidal sulfur particle stability on film composition;Journal of Applied Electrochemistry;2002
2. Admittance spectroscopy of CuInSe2/CdS solar cells prepared by chemical spray pyrolysis;Journal of Applied Physics;1992-05
3. Characterization of CdS/CdTe thin‐film solar cells by admittance spectroscopy and deep‐level transient spectroscopy;Journal of Applied Physics;1984-12-15
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