Point defects in thermal SiO2 layers: Thermally stimulated luminescence and corona oxide electrical characterization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1615692
Reference13 articles.
1. Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)
2. Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
3. Nitrogen depletion during oxidation in N2O
4. Nitridation of Thin Gate or Tunnel Oxides by Nitric Oxide
5. Characterization of nitrided silicon-silicon dioxide interfaces
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Combined Nanoscale and Device-Level Degradation Analysis of $\hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices;IEEE Transactions on Device and Materials Reliability;2009-12
2. Impact of implantation on the properties of N2O-nitrided oxides of p+- and n+-gate MOS devices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05
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