Electronic structure of amorphous semiconductor heterojunctions by photoemission and photoabsorption spectroscopy
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Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Experimental and Theoretical Analysis of Resonant Tunneling Through a-Si:H/a-Si1−xCx:H Double-Barrier in p-i-n Structure;MRS Proceedings;1989
2. Band offsets for the silicon nitride/amorphous silicon interface: Implications for charge transport and trapping in silicon nitride;Journal of Non-Crystalline Solids;1987-12
3. Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopy;Journal of Applied Physics;1987-04-15
4. Growth and Structure of Compositionally Modulated Amorphous Semiconductor Superlattices and Heterojunctions;Thin Film Growth Techniques for Low-Dimensional Structures;1987
5. Electroabsorption measurements of interfaces ina-Si:H/a-SiOx:H anda-Si:H/a-SiNx:H multilayer films;Physical Review B;1986-08-15
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