Author:
Jiang Yeu-Long,Hwang Huey-Liang
Abstract
ABSTRACTa-Si:H/a-Si1−x Cx:H double-barrier structure imbedded in the i layer were fabricated by glow discharge. By using the built-in field in the i layer and the external applied bias, the effects of photo-excited carriers driven by electric field in the i layer tunneling through the double-barrier quantum well were examined. Distinct current bumps are distinctly observed when the quantum well structure is imbedded in the middle section of the i layer. A simple theoretical analysis was developed to study the quantum transport behavior.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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