Deep states in silicon‐on‐insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100099
Reference10 articles.
1. High-speed, low-power, implanted-buried-oxide CMOS circuits
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3. High-performance SOI-CMOS Transistors in oxygen-implanted silicon without epitaxy
4. Anomalous subthreshold current—Voltage characteristics of n-channel SOI MOSFET's
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