Optoelectronic characteristics of the Ag-doped Si p-n photodiodes prepared by a facile thermal diffusion process-Reference-Cited by-同舟云学术

Optoelectronic characteristics of the Ag-doped Si p-n photodiodes prepared by a facile thermal diffusion process

Published:2019-05 Issue:5 Volume:9 Page:055024
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

El-Amir Ahmed A. M.¹²^ORCID,Ohsawa Takeo¹^ORCID,Ishii Satoshi¹^ORCID,Imura Masataka¹^ORCID,Segawa Hiroyo¹,Sakaguchi Isao¹,Nagao Tadaaki¹³^ORCID,Shimamura Kiyoshi¹²,Ohashi Naoki¹⁴^ORCID

Affiliation:

1. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

2. Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

3. Department of Condensed Matter Physics, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810, Japan

4. Materials Research Center for Element Strategy, Tokyo Institute of Technology, Midori, Yokohama 226–8503, Japan

Funder

National Institute for Materials Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5091661

Reference26 articles.

1. Space-Confined Chemical Vapor Deposition Synthesis of Ultrathin HfS2 Flakes for Optoelectronic Application

2. Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors

3. Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

4. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

5. Self-Powered, Flexible, and Solution-Processable Perovskite Photodetector Based on Low-Cost Carbon Cloth

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis on the capacitance-voltage characteristics of metal-insulator-semiconductor capacitors based on thermally evaporated WOx on n- and p- type crystalline silicon;Materials Science and Engineering: B;2024-06

2. High-performance multicolor p-Ag:NiOx/n-Si heterojunction photodiode enhanced by Ag-doped NiOx;Materials Science in Semiconductor Processing;2022-03

3. Molecular engineering for donor electron to enhance photodiode properties of Co/n-Si and Co/p-Si structures: The effect of hematoxylin interface;Optik;2021-09

4. High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe2 van der Waals heterojunction with strong interlayer transition;Materials Horizons;2021

5. Enhancing ultraviolet-to-visible rejection ratio by inserting an intrinsic NiO layer in p-NiO/n-Si heterojunction photodiodes;Nanotechnology;2020-06-12