High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe2 van der Waals heterojunction with strong interlayer transition

Author:

Zhao Qixiao12,Gao Feng3,Chen Hongyu12ORCID,Gao Wei12,Xia Mengjia12,Pan Yuan12,Shi Hongyan4,Su Shichen125ORCID,Fang Xiaosheng6ORCID,Li Jingbo12

Affiliation:

1. Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China

2. Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China

3. Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China

4. Department of Physics, Harbin Institude of Technology, Harbin 150080, P. R. China

5. SCNU Qingyuan Institute of Science and Technology Innovation Co., Ltd, Qingyuan 511517, P. R. China

6. Department of Materials Science, Fudan University, Shanghai 200433, P. R. China

Abstract

A p-Te/n-MoSe2 vdWH polarization-sensitive photodetector with high comprehensive performance is proposed, which would provide an opportunity for constructing a compact monolithic polarization-sensitive imaging system with low energy consumption.

Funder

National Natural Science Foundation of China

South China Normal University

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

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