Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure-Reference-Cited by-同舟云学术

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Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Published:2012-01-30 Issue:5 Volume:100 Page:052101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen J. C. H.,Wang D. Q.,Klochan O.,Micolich A. P.,Das Gupta K.,Sfigakis F.,Ritchie D. A.,Reuter D.,Wieck A. D.,Hamilton A. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3673837

Reference18 articles.

1. Quantum Transport in Semiconductor Nanostructures

2. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

3. Formation of two‐dimensional electron and hole gases in undoped AlxGa1−xAs/GaAs heterostructures

4. Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2Hall-Bar Devices

5. Fabrication of high-quality one- and two-dimensional electron gases in undoped GaAs/AlGaAs heterostructures

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