Response to ‘‘Comment on ‘Spatially resolved defect mapping in semiconductors using laser‐modulated thermoreflectance’ ’’ [Appl. Phys. Lett.49, 301 (1986)]-Reference-Cited by-同舟云学术

Response to ‘‘Comment on ‘Spatially resolved defect mapping in semiconductors using laser‐modulated thermoreflectance’ ’’ [Appl. Phys. Lett.49, 301 (1986)]

Published:1986-08-04 Issue:5 Volume:49 Page:301-302
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guidotti D.,van Driel H. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.97149

Reference9 articles.

1. Photothermal displacement spectroscopy: An optical probe for solids and surfaces

2. Optical heating in semiconductors

3. Infrared reflectivity probing of thermal and spatial properties of laser-generated carriers in germanium

4. In situ investigation of transport in semiconductors: A contactless approach

5. Photoreflectance and electroreflectance in silicon

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1. Photothermal reflectance investigation of processed silicon. II. Signal generation and lattice temperature dependence in ion‐implanted and amorphous thin layers;Journal of Applied Physics;1990-03-15

2. Photothermal reflectance investigation of processed silicon. I. Room‐temperature study of the induced damage and of the annealing kinetics of defects in ion‐implanted wafers;Journal of Applied Physics;1990-03-15

3. Photothermal Reflectance Investigation of Implanted Silicon;Surface Engineering;1990

4. Modeling of luminescence phase delay for nondestructive characterization of Si wafers;Journal of Applied Physics;1989-09-15

5. Laser‐induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: A temperature study;Applied Physics Letters;1989-06-12