Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots-Reference-Cited by-同舟云学术

Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

Published:2017-03 Issue:3 Volume:7 Page:035122
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Khanonkin I.¹^ORCID,Mishra A. K.²^ORCID,Karni O.³,Mikhelashvili V.¹²^ORCID,Banyoudeh S.⁴,Schnabel F.⁴,Sichkovskyi V.⁴,Reithmaier J. P.⁴,Eisenstein G.¹²

Affiliation:

1. Russell Berrie Nanotechnology Institute, Technion, 32000 Haifa, Israel

2. Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, 32000 Haifa, Israel

3. E. L. Ginzton Laboratory, Department of Applied Physics, Stanford University, Stanford, California 94305, USA

4. Institute of Nanostructure Technologies and Analytics, Technische Physik, CINSaT, University of Kassel, 34132 Kassel, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979556

Reference27 articles.

1. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C

2. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

3. Temperature-Insensitive High-Speed Directly Modulated 1.55- $\mu \text{m}$ Quantum Dot Lasers

4. Quantum-dot lasers for 35 Gbit/s pulse-amplitude modulation and 160 Gbit/s differential quadrature phase-shift keying

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