Applying x-ray microscopy and finite element modeling to identify the mechanism of stress-assisted void growth in through-silicon vias
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3629988
Reference23 articles.
1. A study of stress-driven diffusive growth of voids in encapsulated interconnect lines
2. Sub-imaging Techniques For 3D-Interconnects On Bonded Wafer Pairs
3. X-ray computed tomography in Zernike phase contrast mode at 8 keV with 50-nm resolution using Cu rotating anode X-ray source
4. X-ray Microscopy for Interconnect Characterization
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