Temperature profile and pressure effect on the growth of silicon nanowires-Reference-Cited by-同舟云学术

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Temperature profile and pressure effect on the growth of silicon nanowires

Published:2004-12-06 Issue:23 Volume:85 Page:5709-5711
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheng Sau-Wan,Cheung Ho-Fai

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1830683

Reference15 articles.

1. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

2. Oxide-Assisted Semiconductor Nanowire Growth

3. Si nanowires grown from silicon oxide

4. Synthesis of Large Areas of Highly Oriented, Very Long Silicon Nanowires

5. Semiconductor nanowires: synthesis, structure and properties

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4. Growth of Single-Crystalline Nanorods in Atmospheric Plasma;Japanese Journal of Applied Physics;2011-01-20

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