Field emission properties of GaN films on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122289
Reference10 articles.
1. Graded electron affinity electron source
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3. Fabrication of GaN field emitter arrays by selective area growth technique
4. Comparison of electric field emission from nitrogen‐doped, type Ib diamond, and boron‐doped diamond
5. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
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