Field emission properties of the Te-doped pseudohydrogen passivated GaN nanowires: A first principle density functional study-Reference-Cited by-同舟云学术

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Field emission properties of the Te-doped pseudohydrogen passivated GaN nanowires: A first principle density functional study

Published:2014-02 Issue: Volume:83 Page:277-281
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Zhang Yulong,Li Enling,Ma Deming,Wang Wei,Song Sha,Fu Nannan,Lin Jie

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference21 articles.

1. Nanowire-based multiple quantum dot memory

2. Single-nanowire electrically driven lasers

3. Label-free detection of small-molecule-protein interactions by using nanowire nanosensors

4. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

5. Growth of GaN and $\bf Al_{0.2}Ga_{0.8}N$ on Patterened Substrates via Organometallic Vapor Phase Epitaxy

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1. First principle study on the application of crystalline cathodes Li2Mn0.5TM0.5O3 for promoting the performance of lithium-ion batteries;Computational Materials Science;2020-02

2. First-principles study of CN point defects on sidewall surface of [0 0 0 1]-oriented GaN nanowires;Applied Surface Science;2019-02

3. Adsorption of alkali-metal atoms on GaN nanowires photocathode;Applied Surface Science;2017-11

4. Electronic band structures of Te-doped GaN nanowires;Materials Today: Proceedings;2017

5. Density functional theories study on optoelectronic properties of arsenic-doped GaN nanowires;Optical and Quantum Electronics;2016-11-25

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