Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments-Reference-Cited by-同舟云学术

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Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

Published:2006-01-30 Issue:5 Volume:88 Page:053118
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kanbara Takayoshi,Takenobu Taishi,Takahashi Tetsuo,Iwasa Yoshihiro,Tsukagoshi Kazuhito,Aoyagi Yoshinobu,Kataura Hiromichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2171481

Reference23 articles.

1. Physical Properties of Carbon Nanotubes

2. High-Field Electrical Transport in Single-Wall Carbon Nanotubes

3. Room-temperature transistor based on a single carbon nanotube

4. Ballistic carbon nanotube field-effect transistors

5. The Role of Metal−Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

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1. One-dimensional heterostructure: The selective decoration of single-walled carbon nanotube tips with metallic nanoparticles;MRS Bulletin;2022-06-20

2. Applying ART Toward Single-Walled Carbon Nanotube Device Fabrication;Methods of the Alignment-Relay Technique for Nanosystems;2021

3. Spatial and Contamination-Dependent Electrical Properties of Carbon Nanotubes;Nano Letters;2018-01-05

4. Characterization of the Resistance and Force of a Carbon Nanotube/Metal Side Contact by Nanomanipulation;Scanning;2017

5. Electrical contacts to individual SWCNTs: A review;Beilstein Journal of Nanotechnology;2014-11-21

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