Materials selection for oxide-based resistive random access memories
Author:
Affiliation:
1. Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903470
Reference51 articles.
1. Nanoionics-based resistive switching memories
2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
3. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
4. Emerging memories: resistive switching mechanisms and current status
5. Memristive switching mechanism for metal/oxide/metal nanodevices
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