Increasing the optical transition oscillator strength in GaSb-based type II quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4726423
Reference18 articles.
1. Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption
2. Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers
3. Monolithic tunable GaSb-based lasers at 3.3 [micro sign]m
4. Mid-infrared semiconductor heterostructure lasers for gas sensing applications
5. Temperature dependent characteristics of λ∼3.8μm room-temperature continuous-wave quantum-cascade lasers
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4. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers;Nanoscale Research Letters;2015-12
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