Mechanism of surface leakage of nanoscale Schottky contacts between ErSi2 nanoislands and Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3435471
Reference25 articles.
1. Schottky diodes based on a single GaN nanowire
2. Schottky nanocontacts on ZnO nanorod arrays
3. ZnO Nanobelt/Nanowire Schottky Diodes Formed by Dielectrophoresis Alignment across Au Electrodes
4. Current transport mechanism in a metal–GaN nanowire Schottky diode
5. Current transport and capacitance–voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process
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1. Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range;Journal of Electronic Materials;2022-12-08
2. Suppressing Effects of Ag Wetting Layer on Surface Conduction of Er Silicide/Si(001) Nanocontacts;Chinese Physics Letters;2018-08
3. Controlling the Electrical Transport Properties of Nanocontacts to Nanowires;Nano Letters;2015-06-11
4. STM study of electrical transport properties of one dimensional contacts between MnSi∼1.7nanowires and Si(111) and (110) substrates;Nanotechnology;2015-04-22
5. Scanning tunneling microscopic study of the effects of surface conduction on the electrical transport properties of nanosized Schottky contacts between FeSi2 nanoislands and Si(111);Applied Physics Letters;2014-12-08
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