Scanning tunneling microscopic study of the effects of surface conduction on the electrical transport properties of nanosized Schottky contacts between FeSi2 nanoislands and Si(111)
Author:
Affiliation:
1. Analysis and Testing Center, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China
2. Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China
Funder
Innovation Program of Shanghai Municipal Education Commission
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903873
Reference21 articles.
1. Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes
2. Mechanism of surface leakage of nanoscale Schottky contacts between ErSi2 nanoislands and Si(001)
3. Minority carrier effects in nanoscale Schottky contacts
4. Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles
5. Electronic transport at semiconductor surfaces––from point-contact transistor to micro-four-point probes
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1. Suppressing Effects of Ag Wetting Layer on Surface Conduction of Er Silicide/Si(001) Nanocontacts;Chinese Physics Letters;2018-08
2. Structural and electronic properties of Pt induced nanowires on Ge(110);Applied Surface Science;2016-11
3. STM study of electrical transport properties of one dimensional contacts between MnSi∼1.7nanowires and Si(111) and (110) substrates;Nanotechnology;2015-04-22
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