Monitoring ion etching of GaAs/AlGaAs heterostructures by real time spectroscopic ellipsometry: Determination of layer thicknesses, compositions, and surface temperature-Reference-Cited by-同舟云学术

Monitoring ion etching of GaAs/AlGaAs heterostructures by real time spectroscopic ellipsometry: Determination of layer thicknesses, compositions, and surface temperature

Published:1992-06 Issue:22 Volume:60 Page:2776-2778
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Heyd A. R.,Collins R. W.,Vedam K.,Bose S. S.,Miller D. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.106873

Reference18 articles.

1. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

2. Interband critical points of GaAs and their temperature dependence

3. Optical properties of AlxGa1−xAs

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE);Applied Surface Science;2023-02

2. Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement;Journal of Vacuum Science & Technology B;2021-09

3. Atomic layer sensitive in-situ plasma etch depth control with reflectance anisotropy spectroscopy (RAS);Optical Measurement Systems for Industrial Inspection X;2017-06-26

4. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment;Beilstein Journal of Nanotechnology;2016-11-21

5. Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring;Applied Surface Science;2015-12