Interface structures in GaAs wafer bonding: Application to compliant substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126440
Reference9 articles.
1. Wafer bonding of gallium arsenide on sapphire
2. Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices
3. Growth of InGaAs multi-quantum wells at 1.3 μm wavelength on GaAs compliant substrates
4. Materials integration of gallium arsenide and silicon by wafer bonding
5. Lattice engineered compliant substrate for defect-free heteroepitaxial growth
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