Continuous wave operation on extremely low‐temperature (375 °C)‐grown AlGaAs quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108876
Reference16 articles.
1. cw electro‐optical characteristics of graded‐index waveguide separate‐confinement heterostructure lasers with proton‐delineated stripe
2. MBE growth of extremely high-quality GaAs–AlGaAs GRIN-SCH lasers with a superlattice buffer layer
3. Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
4. Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers
5. Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Persistent Photoconductivity of Low Temperature Grown AlGaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Al/(CH[sub 3])[sub 3]Ga/AsH[sub 3];Journal of The Electrochemical Society;2000
2. High‐reliability GaAs/AlGaAs multiquantum well lasers grown at a low temperature (375 °C);Applied Physics Letters;1993-12-27
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