High‐reliability GaAs/AlGaAs multiquantum well lasers grown at a low temperature (375 °C)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110104
Reference14 articles.
1. Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy
2. Low Temperature GaAs/Si Technology: from Si Substrate Preparation to the Epitaxial Growth
3. Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers
4. Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy
5. Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350°C by Conventional Molecular Beam Epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier dynamics in low-temperature-grownAlxGa1−xAs/GaAsmultiple quantum wells;Physical Review B;2003-04-17
2. Quantum Well Detector, Modulator and Switch;Solid-State Science and Technology Library
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