High‐field dark currents in thin CVD silicon nitride with graded interfacial composition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90680
Reference14 articles.
1. Electrical properties of Si‐N films deposited on silicon from reactive plasma
2. Effects of electron‐beam irradiation on the properties of CVD Si3N4 films in MNOS structures
3. Direct display of electron back tunneling in MNOS memory capacitors
4. Measurements of charge propagation in Si3N4 films
5. Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of the silicon-plasma silicon nitride interface with in situ transient photoconductivity measurements;Applied Surface Science;1996-09
2. Growth and electronic properties of thin Si3N4films grown on Si in a nitrogen glow discharge;Journal of Applied Physics;1991-04
3. The surface conductivity of silicon oxynitride;Thin Solid Films;1983-11
4. Carrier conduction in thin silicon nitride films;Applied Physics Letters;1982-04-15
5. Electronic structures ofβ- andα-silicon nitride;Physical Review B;1981-05-15
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