Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4861902
Reference18 articles.
1. Smart silicon sensors - examples of Hall-effect sensors
2. Prospects of Using In-Containing Semiconductor Materials in Magnetic Field Sensors for Thermonuclear Reactor Magnetic Diagnostics
3. High Temperature Hall sensors using AlGaN/GaN HEMT Structures
4. Effects of Proton Irradiation on the Magnetoelectric Properties of 2DEG AlGaN/GaN Micro-Hall Sensors
5. Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures
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3. High-temperature three-dimensional GaN-based hall sensors for magnetic field detection;Journal of Physics D: Applied Physics;2020-11-30
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