AlGaN/GaN magnetic sensors featuring heterojunction 2DEG channel-Reference-Cited by-同舟云学术

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AlGaN/GaN magnetic sensors featuring heterojunction 2DEG channel

Published:2021-07-23 Issue:11 Volume:32 Page:115114
ISSN:0957-0233
Container-title:Measurement Science and Technology
language:
Short-container-title:Meas. Sci. Technol.

Author:

Zhang Hui,Huang Huolin^ORCID,Ma Kaiming,Ding Nannan,Dai Jianxun,Sun Zhonghao^ORCID,Sun Nan,Qin Kairong^ORCID

Funder

Special Funds for the Local Science and Technology Development Guided by the Central Government

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

IOP Publishing

Subject

Applied Mathematics,Instrumentation,Engineering (miscellaneous)

Link

https://iopscience.iop.org/article/10.1088/1361-6501/ac12fe/pdf

Reference37 articles.

1. Realization and optimization of bus bar current transducers based on Hall effect sensors;Blagojevic;Meas. Sci. Technol.,2016

2. High sensitivity InSb Hall effect biosensor platform for DNA detection and biomolecular recognition using functionalized magnetic nanobeads;Togawa;Japan. J. Appl. Phys.,2005

3. A current-mode CMOS Hall sensor microsystem based on four-phase current spinning technique;Lei,2019

4. Amperometric circuit for high accuracy 2D and 3D magnetic-field measurements;Roumenin;Meas. Sci. Technol.,2003

5. High temperature Hall effect sensors based on AlGaN/GaN heterojunctions;Lu;J. Appl. Phys.,2006

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoemission of AlGaN nanocone array cathodes for vacuum ultraviolet detectors;Journal of Luminescence;2022-12

2. Demonstration of High-Performance GaN-Based Hall Sensors on Si Substrate by Simulation and Experiment Verification;IEEE Transactions on Electron Devices;2022-12

3. Hall-Effect Sensor Design With Physics-Informed Gaussian Process Modeling;IEEE Sensors Journal;2022-12-01

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